Impact of FinFET and III-V/Ge technology on logic and memory cell behavior
نویسنده
چکیده
In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios (variability and soft errors). FinFET-based circuits show the highest robustness against variability and soft error environments.
منابع مشابه
ISSCC 2015 / SESSION 17 / EMBEDDED MEMORY AND DRAM I / O / 17 . 1 17 . 1 A 0 . 6 V 1 . 5 GHz 84 Mb SRAM
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